Modulating the secondary electron emission coefficient at the base-collector interface of the plasma bipolar junction transistor

摘要

Temporally and spatially-resolved images of the visible emission generated by the gas phase collector of an n~+pn plasma bipolar junction transistor (PBJT) demonstrate the ability of the emitter-base (EB) bias to modulate the effective secondary electron emission coefficient, γ_(SE) at the base-collector interface. Injecting charge carriers into, or withholding free electrons from, the base of a PBJT (with forward or reverse bias of the EB junction) is found to vary γ_(SE) and the collector plasma electron density by factors of 1.8-3.6 and 3.8-6.7, respectively.