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Anomalous magnetic configuration of Mn_2NiAl ribbon and the role of hybridization in the martensitic transformation of Mn_(50)Ni_(50-x)Al_x ribbons

机译:Mn_2NiAl薄带的异常磁性构型及其在Mn_(50)Ni_(50-x)Al_x薄带马氏体转变中的作用

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摘要

The magnetic configuration of Mn_2NiAl ribbon has been investigated. In contrast to Ni_2MnAl, the compound Mn_2NiAl with considerable disorder does exhibit ferromagnetism and, due to exchange interaction competition, both ferromagnetic and antiferromagnetic moment orientations can coexist between nearest neighbor Mn atoms. This is unexpected in Heusler alloys. Regarding the mechanism of the martensitic transformation in Mn_(50)Ni_(50-x)Al_x, it is found that increasing the Al content results in an unusual change in the lattice constant, a decrease of the transformation entropy change, and enhancement of the calculated electron localization. These results indicate that the p-d covalent hybridization between Mn (or Ni) and Al atoms gradually increases at the expense of the d-d hybridization between Ni and Mn atoms. This leads to an increased stability of the austenite phase and a decrease of the martensitic transformation temperature. For 11 ≤x≤ 14, Mn_(50)Ni_(50-x)Al_x ferromagnetic shape memory alloys are obtained.
机译:研究了Mn_2NiAl薄带的磁性。与Ni_2MnAl相比,具有相当大的无序性的化合物Mn_2NiAl确实表现出铁磁性,并且由于交换相互作用的竞争,铁磁性和反铁磁性矩取向都可以在最邻近的Mn原子之间共存。这在Heusler合金中是出乎意料的。关于Mn_(50)Ni_(50-x)Al_x中的马氏体相变的机理,发现增加Al含量会导致晶格常数发生异常变化,减小相变熵变化,并增强计算的电子本地化。这些结果表明,Mn(或Ni)和Al原子之间的p-d共价杂化逐渐增加,但以Ni和Mn原子之间的d-d杂化为代价。这导致奥氏体相的稳定性增加并且马氏体相变温度降低。对于11≤x≤14,获得Mn_(50)Ni_(50-x)Al_x铁磁形状记忆合金。

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  • 来源
    《Applied Physics Letters》 |2014年第23期|232404.1-232404.4|共4页
  • 作者单位

    Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China,Department of Physics, Hebei Medical University, Shijiazhuang 050017, China;

    Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China;

    Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China;

    Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China;

    Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China;

    Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China;

    Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

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  • 正文语种 eng
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