机译:x≤0.034的InP_(1-x)Bi_x稀铋化物的非接触电反射及带隙和自旋轨道分裂的理论研究
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;
Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF, United Kingdom;
Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF, United Kingdom;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China,Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden;
机译:InP
机译:Bi相关杂质态对Ⅲ-Ⅴ-Bi稀合金InP_(1-x)Bi_x,InAs_(1-x)Bi_x,InSb_(1-x)Bi_x和GaSb_的能隙和自旋轨道分裂能的影响(1-x)Bi_x
机译:超稀Gaas_(1-x)bi_x合金的非接触电反射研究
机译:GaP1-xBix稀铋化物合金中的带隙和自旋轨道分裂的巨大弯曲
机译:稀磁性半导电锌(1-X)锰(X)硒化物(光型,激光,带隙,表皮)的光致发光和激发发射。
机译:GaP1-xBix稀铋化物合金中的带隙和自旋轨道分裂能的巨大弯曲
机译:InP1-xBix稀铋化物中x <= 0.034的非接触电反射和带隙和自旋轨道分裂的理论研究