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Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP_(1-x)Bi_x dilute bismide with x ≤ 0.034

机译:x≤0.034的InP_(1-x)Bi_x稀铋化物的非接触电反射及带隙和自旋轨道分裂的理论研究

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摘要

Contactless electroreflectance is applied to study the band gap (E_0) and spin-orbit splitting (Δ_(SO)) in InP_(1-x)Bi_x alloys with 0<x≤0.034. The E_0 transition shifts to longer wavelengths very significantly (-83meV/% Bi), while the E_0 + Δ_(SO) transition shifts very weakly (-13meV/% Bi) with the rise of Bi concentration. These changes in energies of optical transitions are discussed in the context of the valence band anticrossing model and ab initio calculations. Shifts of E_0 and E_0 + Δ_(SO) transitions, obtained within ab-initio calculations, are -106 and - 20meV per % Bi, respectively, which is in a good agreement with experimental results.
机译:采用非接触电反射法研究了0 <x≤0.034的InP_(1-x)Bi_x合金的带隙(E_0)和自旋轨道分裂(Δ_(SO))。随着Bi浓度的升高,E_0跃迁非常明显地移动到更长的波长(-83meV /%Bi),而E_0 +Δ_(SO)跃迁非常微弱地移动(-13meV /%Bi)。在价带反交叉模型和从头算的背景下讨论了光学跃迁能量的这些变化。从头算计算得出的E_0和E_0 +Δ_(SO)跃迁分别为-106和-20meV /%Bi,与实验结果非常吻合。

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  • 来源
    《Applied Physics Letters》 |2014年第22期|222104.1-222104.4|共4页
  • 作者单位

    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;

    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;

    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;

    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;

    Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF, United Kingdom;

    Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF, United Kingdom;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China,Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:16:08

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