Electric field modulation of ultra-high resonance frequency in obliquely deposited [Pb(Mg_(1/3)Nb_(2/3))O_3]_(0.68)-[PbTiO_3]_(0.32)(011)/FeCoZr heterostructure for reconfigurable magnetoelectric microwave devices

摘要

The multiferroic heterostructure of FeCoZr/[Pb(Mg_(1/3)Nb_(2/3))O_3]_(0.68)-[PbTiO_3]_(0.32)(011) (PMN-PT) prepared by oblique sputtering deposition technique shows a large electrical tunability of ultra-high ferromagnetic resonance frequency from 7.4 GHz to 12.3 GHz. Moreover, we experimentally demonstrate the possibility of realizing electrically reconfigurable magnetoelectric microwave devices with ultra-low power consumption by employing the heterostructure under different resetting electric fields through a reconfiguration process. In particular, the tunability of the FeCoZr/PMN-PT heterostructure from 8.2 GHz to 11.6 GHz can retain in a remanent state after releasing the resetting electric field. This suggests that the tunable microwave devices based on such heterostructures are permanently reconfigurable by simply using a trigger electric field double-pulse which requires much less energy than that of the conventional ones wherein an electric field needs to be constantly applied during operation.