Room temperature resistive state switching with hysteresis in GdMnO_3 thin film with low threshold voltage

摘要

In this paper, we report a room temperature resistive state switching with hysteresis, in a thin film of GdMnO_3 grown on NdGaO_3 substrate. The switched states have a resistance ratio ≈10~3. The switching is unipolar in nature, with a low set voltage ＜3 V, while the reset voltage ＜0.3 V. The switching occurs between a high resistance polaronic insulating state and a low resistance metallic state. The resistance state transition has been ascribed to an electronic mechanism that originates from co-existing phases (created by charge disproportionation) that can undergo a percolative transition enabled by the applied bias.