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Transparent capacitors based on nanolaminate Al_2O_3/TiO_2/Al_2O_3 with H_2O and O_3 as oxidizers

机译:基于H_2O和O_3作为氧化剂的纳米层压Al_2O_3 / TiO_2 / Al_2O_3的透明电容器

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摘要

Transparent capacitors with nanolaminate Al_2O_3/TiO_2/Al_2O_3 (ATA) hybrid dielectrics have been prepared on quartz glass by atomic layer deposition. The maximal capacitance density of 14 fF/μm~2 at 1kHz was obtained. Moreover, an ultralow leakage current density of 2.1 × 10~(-9) A/cm~2 at 1V was realized by using O_3 as the oxidizer. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while several conduction mechanisms coexist at low fields. The AlZnO/ATA/AlZnO transparent capacitors exhibit an average optical transmittance of more than 80% in the visible range, which serve as good candidates for integration in transparent circuits.
机译:通过原子层沉积在石英玻璃上制备了具有纳米层压Al_2O_3 / TiO_2 / Al_2O_3(ATA)杂化电介质的透明电容器。在1kHz下获得的最大电容密度为14fF /μm〜2。此外,通过使用O_3作为氧化剂,在1V时实现了2.1×10〜(-9)A / cm〜2的超低漏电流密度。 Fowler-Nordheim隧穿是高场漏电流的主要机制,而几种传导机制在低场共存。 AlZnO / ATA / AlZnO透明电容器在可见光范围内的平均光学透射率超过80%,是集成在透明电路中的良好候选材料。

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  • 来源
    《Applied Physics Letters》 |2014年第16期|163503.1-163503.4|共4页
  • 作者单位

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China;

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China;

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China;

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China;

    State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WUT-Harvard Joint Nano Key Laboratory, Wuhan University of Technology, Wuhan 430072, People's Republic of China;

    State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WUT-Harvard Joint Nano Key Laboratory, Wuhan University of Technology, Wuhan 430072, People's Republic of China;

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China;

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:15:49

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