Hole Hall mobility of SiGe alloys grown by the traveling liquidus-zone method

摘要

The hole Hall mobility of Si_(1-x)Ge_x single crystal alloys grown by the traveling liquidus-zone method has been investigated. Raman analysis of the alloys with various Ge contents show excellent compositional uniformity and high crystal quality without strain. Secondary ion mass spectrometry indicates that the B concentration is homogeneous throughout the depth of the alloys. The hole Hall mobility in alloys with a low carrier concentration of ～1 × 10~(15)cm~(-3) shows a higher mobility compared with previous results, indicating a reduction in alloy scattering effects. These results suggest that scattering processes in alloy semiconductors should be reconsidered both experimentally and theoretically.