Sequential write-read operations in FeRh antiferromagnetic memory

摘要

B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the Neel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demonstrate sequential write and read operations in antiferromagnetic memory resistors made of B2-orderd FeRh thin films by a magnetic field and electric current only, which open a realistic pathway towards operational antiferromagnetic memory devices.