首页> 外文期刊>Applied Physics Letters >Out-of-plane polarization induced in magnetically-doped topological insulator Bi_(1.37)V_(0.03)Sb_(0.6)Te_2Se by circularly polarized synchrotron radiation above a Curie temperature
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Out-of-plane polarization induced in magnetically-doped topological insulator Bi_(1.37)V_(0.03)Sb_(0.6)Te_2Se by circularly polarized synchrotron radiation above a Curie temperature

机译:居里温度以上的圆偏振同步加速器辐射在磁掺杂拓扑绝缘体Bi_(1.37)V_(0.03)Sb_(0.6)Te_2Se中引起的面外偏振

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摘要

By means of angle- and spin-resolved photoemission, we demonstrate a possibility of the out-of-plane spin polarization of topological surface states and corresponding lifting of the Kramers degeneracy at the Dirac point induced in magnetically-doped topological insulator Bi_(1.37)V_(0.03)Sb_(0.6)Te_2Se by circularly polarized synchrotron radiation (SR) at room temperature. It has been shown that the induced out-of-plane polarization is created due to an "optically"-generated uncompensated spin accumulation with transferring the induced torque to the diluted V 3d ions. We have found theoretically a relation between the imbalance in depopulation of the Dirac cone states under photoexcitation, the generation of steady-state uncompensated spin accumulation and the induced magnetization that can be managed by the polarization of SR.
机译:通过角度和自旋分辨光发射,我们证明了在磁掺杂拓扑绝缘子Bi_(1.37)中诱发的狄拉克点处,拓扑表面状态的平面外自旋极化和相应的Kramers简并抬升的可能性。在室温下通过圆极化同步加速器辐射(SR)生成V_(0.03)Sb_(0.6)Te_2Se。已经显示出,由于“光学地”产生的未补偿的自旋累积而产生感应面外极化,并且将感应转矩传递给稀释的V 3d离子。我们从理论上发现了在光激发下狄拉克锥状态的种群失衡,稳态无补偿自旋积累的产生与可通过SR极化处理的感应磁化之间的关系。

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  • 来源
    《Applied Physics Letters》 |2016年第22期|222404.1-222404.5|共5页
  • 作者单位

    Saint Petersburg State University, Saint Petersburg 198504, Russia;

    Saint Petersburg State University, Saint Petersburg 198504, Russia;

    Saint Petersburg State University, Saint Petersburg 198504, Russia;

    Saint Petersburg State University, Saint Petersburg 198504, Russia;

    Saint Petersburg State University, Saint Petersburg 198504, Russia,Novosibirsk State University, Novosibirsk 630090, Russia,V.S. Sobolev Institute of Geology and Mineralogy, Novosibirsk 630090, Russia;

    Saint Petersburg State University, Saint Petersburg 198504, Russia,Novosibirsk State University, Novosibirsk 630090, Russia,A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia;

    Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia,A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow 119991, Russia,Russian Quantum Center, Skolkovo, Moscow 143025, Russia;

    Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia,A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow 119991, Russia,Russian Quantum Center, Skolkovo, Moscow 143025, Russia;

    Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia,A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow 119991, Russia,Russian Quantum Center, Skolkovo, Moscow 143025, Russia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:14:54

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