Electrical properties of Ill-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescen cooling

摘要

The current-voltage characteristic and ideality factor of Ⅲ-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.