首页> 外文期刊>Applied Physics Letters >Temperature independent infrared responsivity of a quantum dot quantum cascade photodetector
【24h】

Temperature independent infrared responsivity of a quantum dot quantum cascade photodetector

机译:量子点量子级联光电探测器的温度无关红外响应

获取原文
获取原文并翻译 | 示例
       

摘要

We demonstrate a quantum dot quantum cascade photodetector with a hybrid active region of InAs quantum dots and an InGaAs quantum well, which exhibited a temperature independent response at 4.5 μm. The normal incident responsivity reached 10.3 mA/W at 120K and maintained a value of 9 mA/W up to 260 K. It exhibited a specific detectivity above 10~(11) cm Hz~(1/2) W~(-1) at 77 K, which remained at 10~8 cm Hz~(1/2) W~(-1) at 260K. We ascribe the device's good thermal stability of infrared response to the three-dimensional quantum confinement of the InAs quantum dots incorporated in the active region. Published by AIP Publishing.
机译:我们展示了一个具有InAs量子点和InGaAs量子阱的混合有源区的量子点量子级联光电探测器,该探测器在4.5μm处表现出与温度无关的响应。垂直入射响应率在120K时达到10.3 mA / W,直到260 K时仍保持9 mA / W的值。在10〜(11)cm Hz〜(1/2)W〜(-1)以上具有比探测率。在77 K时,在260 K时仍保持在10〜8 cm Hz〜(1/2)W〜(-1)。我们将器件对红外响应的良好热稳定性归因于并入有源区的InAs量子点的三维量子限制。由AIP Publishing发布。

著录项

  • 来源
    《Applied Physics Letters》 |2016年第25期|251103.1-251103.5|共5页
  • 作者单位

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:14:41

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号