机译:表面电荷开关电子光谱法在高k / SiO_2界面上电偶极子的非接触分析
Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan;
Research and Development Initiative for Scientific Innovation of New Generation Batteries, Office of Society-Academia Collaboration for Innovation, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan;
Department of Electrical and Electronic Engineering, Shinshu University, Nagano 380-8553, Japan;
R&D Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan;
Research and Development Initiative for Scientific Innovation of New Generation Batteries, Office of Society-Academia Collaboration for Innovation, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan;
Research and Development Initiative for Scientific Innovation of New Generation Batteries, Office of Society-Academia Collaboration for Innovation, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan;
Research and Development Initiative for Scientific Innovation of New Generation Batteries, Office of Society-Academia Collaboration for Innovation, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan;
Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan,Research and Development Initiative for Scientific Innovation of New Generation Batteries, Office of Society-Academia Collaboration for Innovation, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan;
机译:通过X射线光电子能谱分析直接评估高k电介质/ SiO_2界面上的电偶极矩和氧密度比
机译:高k电介质/ SiO_2界面处的电偶极子形成
机译:高k / SiO_2界面上的电偶极子和电接触诱导间隙状态的物理起源
机译:高k电介质MOSFET的反型层迁移率-高k / SiO_2界面上电偶极子的固有迁移率降低
机译:具有各种高k栅极电介质的硅金属氧化物半导体系统的电子隧穿光谱。
机译:太赫兹光谱技术的印刷电子设备非接触原位电表征方法
机译:用于不确定度分析的碳化钨光谱学 电子偶极矩搜索