Site-controlled InGaN/GaN single-photon-emitting diode

Lei Zhang; Chu-Hsiang Teng; Pei-Cheng Ku; Hui Deng

首页> 外文期刊>Applied Physics Letters >Site-controlled InGaN/GaN single-photon-emitting diode

【24h】

Site-controlled InGaN/GaN single-photon-emitting diode

机译：位置控制的InGaN / GaN单光子发射二极管

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

机译：我们报告了电驱动的位置控制的InGaN / GaN量子点的单光子发射。该器件采用自顶向下方法由包含单个InGaN量子阱的平面发光二极管结构制成。通过光刻控制每个单光子发射二极管的位置，尺寸和高度，为芯片级集成提供了极大的灵活性。

著录项

来源
《Applied Physics Letters》 |2016年第15期|153102.1-153102.4|共4页
作者
Lei Zhang; Chu-Hsiang Teng; Pei-Cheng Ku; Hui Deng;
展开▼
作者单位

Department of Physics, University of Michigan, 450 Church St., Ann Arbor, Michigan 48109, USA;

Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109, USA;

Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109, USA;

Department of Physics, University of Michigan, 450 Church St., Ann Arbor, Michigan 48109, USA;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
入库时间 2022-08-18 03:14:38

相似文献

外文文献
中文文献
专利

1. Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode [J] . Min Guo, Zhi-You Guo, Jing Huang, 中国物理：英文版 . 2017,第002期

机译：基于GaN / InGaN / AlGaN / InGaN / GaN的梯度成分的InGaN基蓝色发光二极管的载流子分布改善
2. Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers [J] . Yujue Yang, Yiping Zeng Physica status solidi . 2014,第7期

机译：具有InGaN / GaN超晶格和梯度组成的InGaN / GaN超晶格中间层的InGaN发光二极管的性能增强
3. Improvement of electrostatic discharge characteristics of InGaN/GaN MQWs light-emitting diodes by inserting an n~+ -InGaN electron injection layer and a p-InGaN/GaN hole injection layer [J] . Chuanyu Jia, Cantao Zhong, Tongjun Yu, Semiconductor science and technology . 2012,第6期

机译：通过插入n〜+ -InGaN电子注入层和p-InGaN / GaN空穴注入层来改善InGaN / GaN MQWs发光二极管的静电放电特性
4. High brightness GaN-based light emitting diodes using ITO/n~+-InGaN/InGaN superlattice/n~+-GaN/p-GaN tunneling junctio [C] . Suk-Hun Lee, Hyo-Kun Son, Sung-Jae Kim, International Symposium on Blue Laser and Light Emitting Diodes . 2004

机译：高亮度GaN的发光二极管使用ITO / n〜+ -ingan / Ingan Superlattice / n〜+ -gan / p-gaN隧道junctio
5. Investigation and Analysis of Thermal Performance of InGaN/GaN Light Emitting Diodes [D] . Das, Shiladitya. 2017

机译：InGaN / GaN发光二极管热性能的调查分析
6. Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes [O] . Po-Hsun Lei, Po-Chun Yang, Po-Chun Huang 2021

机译：聚苯乙烯纳米光学光刻法制备的光子晶体结构P-GAN纳米棒的研究提高了INGAN / GAN绿色发光二极管光提取效率
7. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes [O] . Kyaw, Z., Zhang, Z. H., Liu, W., 2014

机译：关于InGaN / GaN发光二极管的n-GaN层中N-GaN / P-GaN / N-GaN / P-GaN / N-GaN内置结的影响
8. MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications [R] . Schetzina, J. F. 2001

机译：用于激光二极管应用的GaN，InGaN和GaN / InGaN量子阱结构的mBE生长和性质

Site-controlled InGaN/GaN single-photon-emitting diode

摘要

著录项

相似文献

相关主题

期刊订阅