Comparative study of organic transistors with different graphene electrodes fabricated using a simple patterning method

摘要

The performance of organic field-effect transistors (OFETs) can be greatly limited due to the inefficient charge injection caused by the large interfacial barrier at the metal/organic semiconductor interface. To improve this, two-dimensional graphene films have been suggested as alternative electrode materials; however, a comparative study of OFET performances using different types of graphene electrodes has not been systematically investigated. Here, we present a comparative study on the performance of pentacene OFETs using chemical vapor deposition (CVD) grown graphene and reduced graphene oxide (RGO) as electrodes. The large area electrodes were patterned using a simple and environmentally benign patterning technique. Although both the CVD graphene and RGO electrodes showed enhanced device performance compared to metal electrodes, we found the maximum performance enhancement from CVD grown graphene electrodes. Our study suggests that, in addition to the strong π-π interaction at the graphene/organic interface, the higher conductivity of the electrodes also plays an important role in the performance of OFETs.