Flexoelectric behavior in PIN-PMN-PT single crystals over a wide temperature range

摘要

Flexoelectricity couples strain gradient to polarization and usually exhibits a large coefficient in the paraelectric phase of the ferroelectric perovskites. In this study, we employed the relaxor 0.3Pb(In_(1/2)Nb_(1/2))O_3-0.35Pb(Mg_(1/3)Nb_(2/3))O_3-0.35PbTiO_3 (PIN-PMN-PT) single crystals to study the relationship between flexoelectric coefficients and the crystal structure. The flexoelectric coefficients in PIN-PMN-PT single crystal are found to vary from 57 μC/m at orthorhombic/monoclinic phase to 135 μC/m at tetragonal phase, and decreases to less than 27 μC/m in the temperature above T_m. This result discloses that ferroelectricity can significantly enhance the flexoelectricity in this kind of perovskite.