Laser-assisted selective lithography of reduced graphene oxide for fabrication of graphene-based out-of-plane tandem microsupercapacitors with large capacitance

摘要

We present a laser lithography technique that uses a focused laser beam to fabricate out-of-plane tandem microsupercapacitors (MSCs) from reduced graphene oxide (rGO) with large areal capacitance. By controlling the depth of focus in a laser beam focused by an objective lens during laser lithography on a graphene oxide (GO) film, a rGO/GO/rGO structure is formed in the GO film, and subsequently, two independent interdigitated electrodes (IDEs) were fabricated on the top and bottom surfaces of the GO film. The out-of-plane tandem MSC with a parallel assembly of two rGO-IDEs showed two times larger areal capacitance than an in-plane single MSC with one rGO-IDE in the same MSC device footprint. The laser-assisted selective lithography technique using a focused laser beam developed in this study can be further applied to improve the energy density of MSCs without increasing the electrode area by vertically stacking multiple out-of-plane tandem IDEs.