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High switching efficiency in FePt exchange coupled composite media mediated by MgO exchange control layers

机译:由MgO交换控制层介导的FePt交换耦合复合介质中的高开关效率

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摘要

Satisfying the mutually conflicting requirements of easy switchability and high thermal stability still remains a hindrance to achieving ultra-high areal densities in hard disk drives. Exchange coupled composite media used with proper exchange control layers (ECLs) presents a potential solution to circumvent this hindrance. In this work, we have studied the role of MgO and Ta ECLs of different thicknesses in reducing the switching field of FePt media. MgO ECL was found to be more effective than a Ta ECL. For a 2nm MgO ECL, the switching field could be reduced by 41% and at the cost of only a limited loss in thermal stability. Furthermore, a very high switching efficiency of 1.9 was obtained using 2 nm MgO ECL. So, with a proper choice of ECL material and thickness, the switching field of FePt media can be substantially reduced while ensuring high thermal stability and a better signal-to-noise ratio, thus potentially paving the way for very high areal density media.
机译:满足容易互换性和高热稳定性的相互矛盾的要求仍然是在硬盘驱动器中实现超高面密度的障碍。与适当的交换控制层(ECL)一起使用的交换耦合复合介质提供了一种解决此障碍的潜在解决方案。在这项工作中,我们研究了不同厚度的MgO和Ta ECL在减小FePt介质转换场中的作用。发现MgO ECL比Ta ECL更有效。对于2nm MgO ECL,开关场可以减少41%,并且仅以有限的热稳定性损失为代价。此外,使用2 nm MgO ECL可获得1.9的极高开关效率。因此,通过适当选择ECL材料和厚度,可以在确保高热稳定性和更好的信噪比的同时大幅减小FePt介质的转换场,从而有可能为非常高的面密度介质铺平道路。

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  • 来源
    《Applied Physics Letters》 |2017年第4期|042405.1-042405.5|共5页
  • 作者单位

    Department of Electrical and Computer Engineering, National University of Singapore, 21 Lower Kent Ridge Road, Singapore 117576, Republic of Singapore,Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore;

    School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Republic of Singapore;

    Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore;

    Department of Electrical and Computer Engineering, National University of Singapore, 21 Lower Kent Ridge Road, Singapore 117576, Republic of Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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