机译:由MgO交换控制层介导的FePt交换耦合复合介质中的高开关效率
Department of Electrical and Computer Engineering, National University of Singapore, 21 Lower Kent Ridge Road, Singapore 117576, Republic of Singapore,Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore;
School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Republic of Singapore;
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore;
Department of Electrical and Computer Engineering, National University of Singapore, 21 Lower Kent Ridge Road, Singapore 117576, Republic of Singapore;
机译:软层/ FePt-MgO交换耦合复合垂直记录介质的磁性能
机译:铜中间层厚度对fcc-FePt / L1_0-FePt交换耦合复合薄膜微观结构和磁性能的影响
机译:FePt-C / FePt交换耦合垂直介质的开关场分布
机译:L1_0-FEPT / Fe交换耦合复合介质磁性特性对开关场的影响
机译:用于垂直介质的铁磁/铱锰交换耦合软底层。
机译:静电介导的脂质体融合和脂质交流与纳米微粒支持双层的表面电荷的控制遏制毒品和交付
机译:交换耦合复合Fept / TbCo / [Co / Ni] N薄膜与TbCo中间层