As-grown two-dimensional MoS_2 based photodetectors with naturally formed contacts

摘要

Scalable fabrication of two-dimensional materials-based devices with consistent characteristics remains a significant impediment in the field. Here, we report on as-grown monolayer MoS_2 metal-semiconductor-metal photodetectors produced using a CVD process which results in self-contacted two-dimensional material-based devices. The photodetectors show high responsivity (~ 1 AAV) even at a low drain-source voltage (V_(Ds)) of 1.5 V and a maximum responsivity of up to 15 A/W when V_(DS) = 4 V with an applied gate voltage of 8 V. The response time of the devices is found to be on the order of 1 µs, an order of magnitude faster than previous reports. These devices demonstrate the potential of this simple, scalable, and reproducible method for creating as-grown two-dimensional materials-based devices with broad implications for basic research and industrial applications.