机译:金属选择对(010)β-Ga_2O_3肖特基二极管性能的影响
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA;
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA;
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA;
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA;
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA;
机译:(001)取向β-Ga_2O_3外延层的表面态,其起源及其对肖特基势垒二极管电性能的影响
机译:载体捕获由氮气植入损坏的β-GA_2O_3肖特基阻隔二极管的动力学,深层和隔离性能
机译:高掺杂单晶基板上β-GA_2O_3肖特基势垒二极管的温度依赖性电性能
机译:(100)β-GA_2O_3肖特基二极管的电气特性四种不同金属
机译:基于体氮化镓的电子设备:肖特基二极管,肖特基型紫外光电探测器和金属氧化物半导体电容器。
机译:具有不对称金属触点的MoS2肖特基二极管的层依赖性和气体分子吸收特性
机译:频率和栅极电压对Al ∕ SiO2 ∕ p-Si金属-绝缘体-半导体肖特基二极管的介电性能和电导率的影响