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Tuning electrical conductivity, charge transport, and ferroelectricity in epitaxial BaTiO_3 films by Nb-doping

机译:Nb掺杂调节BaTiO_3外延薄膜的电导率,电荷传输和铁电

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摘要

The electrical conductivity, charge transport behavior, and ferroelectricity of epitaxial BaNb_xTi_(1_x)O_3 films (BNTO, 0.0≤x≤0.5) prepared by pulsed laser deposition are investigated. It is found that Nb-doping can tune the conventional insulating BaTiO_3 films from an insulating to highly conductive semiconducting or metallic state, resulting in a variation of the electrical conductivity of the BNTO films over 10~5. For λ: ≤ 0.25, the charge transport is dominated by the small polaron hopping mechanism, while the charge transport for x = 0.5 transits from the bipolaron to the small-polaron, and then the thermal phonon scattering mechanisms with increasing temperature. Interestingly, the piezo-force microscopy imaging reveals the presence of ferroelectricity in the properly Nb-doped conductive BNTO films (x≤0.25) deposited in the presence of a small amount of oxygen (3 × 10~(_3)Pa). Our work provides additional technical roadmaps to manipulate the conductivity and charge transport behaviors in ferroelectric films, which will boost potential applications in future information storage, sensors, and photovoltaic devices. J
机译:研究了通过脉冲激光沉积制备的外延BaNb_xTi_(1_x)O_3薄膜(BNTO,0.0≤x≤0.5)的电导率,电荷传输行为和铁电性。研究发现,掺Nb可使传统的BaTiO_3绝缘膜从绝缘状态转变为高导电半导体状态或金属状态,导致BNTO膜的电导率变化超过10〜5。对于λ:≤0.25,电荷传输受小极化子跳跃机制支配,而x = 0.5的电荷传输则从双极化子转移到小极化子,然后随着温度的升高而发生热声子散射机制。有趣的是,压电显微镜显示了在少量氧气(3×10〜(_3)Pa)的情况下沉积的适当掺Nb的导电BNTO薄膜(x≤0.25)中存在铁电。我们的工作提供了其他技术路线图,以控制铁电薄膜中的电导率和电荷传输行为,这将促进在未来的信息存储,传感器和光伏设备中的潜在应用。 Ĵ

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  • 来源
    《Applied Physics Letters》 |2017年第18期|182903.1-182903.5|共5页
  • 作者单位

    Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Laboratoiy of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China;

    Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Laboratoiy of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China;

    Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Laboratoiy of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China;

    Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Laboratoiy of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China;

    Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Laboratoiy of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China;

    Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Laboratoiy of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China;

    Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Laboratoiy of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China;

    Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Laboratoiy of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China;

    Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Laboratoiy of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China;

    Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Laboratoiy of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China;

    Electronic Paper Displays Institute, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China , Shenzhen Guohua Optoelectronics Tech, Co. Ltd., Shenzhen 518110, People's Republic of China , Academy of Shenzhen Guohua Optoelectronics, Shenzhen 518110, People's Republic of China;

    Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Laboratoiy of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China;

    Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Laboratoiy of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China , Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

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