首页> 外文期刊>Applied Physics Letters >Modulation of electronic and optical properties in mixed halide perovskites CsPbCl_(3x)Br_(3(1-x)) CsPbBr_(3x)I_(3(1-x))
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Modulation of electronic and optical properties in mixed halide perovskites CsPbCl_(3x)Br_(3(1-x)) CsPbBr_(3x)I_(3(1-x))

机译:混合卤化物钙钛矿中CsPbCl_(3x)Br_(3(1-x))CsPbBr_(3x)I_(3(1-x))的电子和光学性质的调制

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摘要

The recent discovery of lead halide perovskites with band gaps in the visible presents important potential in the design of high efficient solar cells. CsPbCl_3, CsPbBr_3 and CsPbI_3 are stable compounds within this new family of semiconductors. By performing the first-principles calculation, we explore the structural, electronic and optical properties of CsPbCl_(3x)Br_(3(1-x)) and CsPbBr_(3x)I_(3(1_x)) with various compositions of halide atoms. Structural stability is demonstrated with halide atoms distributing randomly at the halide atomic sites. CsPbCI_(3x)Br_(3(1_x)) and CsPbBr_(3x)I_(3(1-x)), exhibit the modulation of their band gaps by varying the halide composition. Our results also indicate that CsPbCI_(3x)Br_(3(1-x)) and CsPbBr_(3x)I_(3(1_x)) with different halide compositions are suitable to application to solar cells for the general features are well preserved. Good absorption to lights of different wavelengths has been obtained in these mixed halide perovskites.
机译:在可见光中具有带隙的卤化钙钛矿的最新发现为高效太阳能电池的设计提供了重要的潜力。在这个新的半导体家族中,CsPbCl_3,CsPbBr_3和CsPbI_3是稳定的化合物。通过执行第一性原理计算,我们探索了具有各种卤原子组成的CsPbCl_(3x)Br_(3(1-x))和CsPbBr_(3x)I_(3(1_x))的结构,电子和光学性质。卤原子随机分布在卤原子位点证明了​​结构稳定性。 CsPbCl_(3x)Br_(3(1_x))和CsPbBr_(3x)I_(3(1-x))通过改变卤化物的组成显示出其带隙的调节。我们的结果还表明,具有不同卤化物组成的CsPbCl_(3x)Br_(3(1-x))和CsPbBr_(3x)I_(3(1_x))适合保留到太阳能电池中,因为一般特征得到了很好的保留。在这些混合卤化物钙钛矿中已获得对不同波长的光的良好吸收。

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  • 来源
    《Applied Physics Letters》 |2017年第11期|113901.1-113901.5|共5页
  • 作者单位

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100083, China;

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100083, China;

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100083, China;

    School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong 510006, China;

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100083, China;

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100083, China,School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong 510006, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:13:59

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