机译:缩回:“亚kT / q亚阈值斜率p-金属氧化物半导体场效应晶体管,其单晶Pb(Zr,Ti)O_3具有高度可靠的负电容” [Appl。物理来吧108,103504(2016)]
Department of Material Science and Engineering, Seoul National University, Seoul 151 -742, South Korea ,Eui-San Research Center, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-742, South Korea;
Department of Material Science and Engineering, Seoul National University, Seoul 151 -742, South Korea ,Eui-San Research Center, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-742, South Korea;
机译:具有高度可靠的负电容的单晶粒Pb(Zr,Ti)O_3的亚kT / q亚阈值斜率p-金属氧化物半导体场效应晶体管
机译:勘误表:“外延PbZrO_3 / PbZr_(0.8)Ti_(0.2)O_3多层中的薄PbZrO_3层的厚度驱动反铁电-铁电相变” [Appl。物理来吧91,122915(2007)]
机译:缩回:具有外延类Pb(Zr,Ti)O_3的多位铁电场效应晶体管(应用物理学报(2016)119(124108)DOI:10.1063 / 1.4945002)
机译:低温多晶硅薄膜晶体管中使用负电容的sub-kT / q亚阈值斜率
机译:缩回:“子KT / Q子坡斜坡p金属 - 氧化物 - 半导体场效应晶体晶体管,具有高度可靠的负电容”Appl。物理。吧。 108,103504(2016)