首页> 外文期刊>Applied Physics Letters >Electric field-induced resistive switching, magnetism, and photoresponse modulation in a Pt/Co_(0.03)Zn_(0.97)O/Nb:SrTiO_3 multi-function heterostructure
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Electric field-induced resistive switching, magnetism, and photoresponse modulation in a Pt/Co_(0.03)Zn_(0.97)O/Nb:SrTiO_3 multi-function heterostructure

机译:Pt / Co_(0.03)Zn_(0.97)O / Nb:SrTiO_3多功能异质结构中的电场感应阻变,磁性和光响应调制

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摘要

A Co0.03Zn0.97O (CZO) thin film was epitaxially grown on a Nb doped (001) SrTiO3 (NSTO) single-crystal substrate by pulsed laser deposition to form a Pt/CZO/NSTO heterostructure. This device exhibits stable bipolar resistive switching, well retention and endurance, multilevel memories, and a resistance ratio of high resistance state (HRS)/low resistance state (LRS) up to 7 x 10(5). Under the illumination of a 405 nm laser, the HRS of the device showed distinct photoelectricity with an open-circuit voltage of 0.5 V. A stronger ferromagnetism was observed at the HRS than at the LRS. The above phenomenon is attributable to the accumulation and migration of oxygen vacancies at the interface of CZO/NSTO. Our results demonstrated a pathway towards making multifunctional devices that simultaneously exhibit resistive switching, photoelectricity, and ferromagnetism. Published by AIP Publishing.
机译:通过脉冲激光沉积在Nb掺杂(001)SrTiO3(NSTO)单晶衬底上外延生长Co0.03Zn0.97O(CZO)薄膜,以形成Pt / CZO / NSTO异质结构。该器件具有稳定的双极电阻切换,良好的保持性和耐久性,多级存储器以及高达7 x 10(5)的高电阻状态(HRS)/低电阻状态(LRS)的电阻比。在405 nm激光的照射下,器件的HRS在0.5 V的开路电压下显示出独特的光电性能。在HRS处观察到的铁磁性强于LRS。以上现象归因于CZO / NSTO界面上氧空位的积累和迁移。我们的结果证明了制造多功能器件的途径,该器件同时具有电阻开关,光电和铁磁性。由AIP Publishing发布。

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  • 来源
    《Applied Physics Letters》 |2018年第15期|153504.1-153504.4|共4页
  • 作者单位

    Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China;

    Hubei Univ Technol, Sch Sci, Wuhan 430068, Hubei, Peoples R China;

    Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China;

    Hubei Univ Nationalities, Sch Informat Engn, Enshi 445000, Hubei, Peoples R China;

    Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China;

    Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China;

    Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China;

    Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China;

    Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-18 03:13:52

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