Non-equilibrium engineering of chemically grown SiO_2/Si by UV nanosecond pulsed laser annealing from the viewpoint of bias temperature instability sources

摘要

The impacts of high-temperature UV nanosecond pulsed laser annealing (LA) on a chemically grown SiO2/Si system are systematically investigated as a function of the number of irradiated pulses. A progressive transition is observed for both the tetrahedral SiO4 network and the SiO2/Si interface, being assumed to play an essential role in controlling bulk SiO2 traps and interface states. The presented results open the perspective to improve bias temperature instability of low thermal budget gate stacks by UV ns pulsed LA, particularly in emerging 3D integrations.