A drastic increase in critical thickness for strained SiGe by growth on mesa-patterned Ge-on-Si

摘要

We demonstrate that the critical thickness for Ge-rich strained SiGe layers can be drastically increased by a factor of more then two by means of growth on mesa-patterned Ge-on-Si. The Si0.2Ge0.8 layer grown on sub-millimeter mesa Ge-on-Si is fully strained and free from ridge roughness, while the same Si0.2Ge0.8 layers grown on unpatterned Ge-on-Si and a Ge substrate are partially strain-relaxed with the surface covered by high-density ridge roughness. This demonstrates that the proposed patterning method can provide thick and stable strained SiGe films as promising templates for realization of strained SiGe-based optoelectronic and spintronic devices. (c) 2021 The Japan Society of Applied Physics