X-ray Reflectivity Study On Depth Profile Of Acid Generator Distribution In Chemically Amplified Resists

摘要

In the sub-100-nm mass production of semiconductor devices, thin-film resists dispersing acid generator molecules, referred to as chemically amplified resists, have been used. Feature sizes in lithography are approaching the molecular scale with the rapid progress in miniaturization. With reductions in lateral dimensions, a decrease in resist thickness is inevitable and the effects of interfaces become significant. A requirement for ultrafine fabrication is the uniformity of resist components. In this work, the depth profile of the acid generator distribution was investigated by X-ray reflectivity measurement at SPring-8. The depth profile in thin resist films was clarified. It was found that the depth profile varies with acid generator concentration.