Reply to 'Comment on 'Current perpendicular to film plane type giant magnetoresistance effect using a Ag-Mg spacer and Co_2Fe_(0.4)Mn_(0.6)Si Heusler alloy electrodes'' [Appl. Phys. Express 8, 063008 (2015)]

摘要

To begin with, we would like to appreciate the comments by Furubayashi et al. The following are our answers to their questions. Answer to question 1): The device sizes, A, were measured using scanning electron microscope (SEM) images of a reference sample, which were patterned by electron-beam lithography and ion milled by Ar plasma, similar to that of current perpendicular to film plane type giant magneto-resistance (CPP-GMR) devices. The SEM observation was performed after removing the electron beam resist. Considering the distributions among the batches of the patterning, reproducibility was very good, and we achieved reasonable results as observed in our reference Ag spacer devices in the presented paper.