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Robust wavelength-locked narrow-linewidth Er-doped yttrium aluminum garnet laser

机译:稳健的波长锁定窄线宽掺Er钇铝石榴石激光器

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摘要

We experimentally show and report on a high-slope-efficiency, wavelength-locked, narrow-linewidth operation in a resonantly diode-pumped Er-doped yttrium aluminum garnet (Er:Y_3Al_5O_(12), Er:YAG) laser by using a volume Bragg grating (VBG) as a wavelength selector and an input mirror simultaneously. In this wavelength-locked operation, a maximum output power of 6.5W at 1645 nm was achieved, which corresponds to a maximum slope efficiency of 105% with respect to the incident power. The small fluctuation of the lasing spectrum demonstrates good stability, with a 3 dB bandwidth of 0.06 nm at the center wavelength. This result shows potential applications of the VBG for high-efficiency, wavelength-locked, narrow-linewidth, and highly stable Er:YAG lasers.
机译:我们通过实验显示并报告了在使用体积的谐振二极管泵浦掺Er的钇铝石榴石(Er:Y_3Al_5O_(12),Er:YAG)激光器中的高斜率效率,波长锁定,窄线宽操作布拉格光栅(VBG)同时用作波长选择器和输入镜。在该波长锁定操作中,在1645 nm处实现了6.5W的最大输出功率,这对应于入射功率的最大斜率效率为105%。激光光谱的小波动显示出良好的稳定性,中心波长处的3 dB带宽为0.06 nm。该结果表明VBG在高效,波长锁定,窄线宽和高度稳定的Er:YAG激光器中的潜在应用。

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  • 来源
    《_Applied Physics Express》 |2015年第1期|012703.1-012703.3|共3页
  • 作者单位

    Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China;

    SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;

    SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;

    Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China;

    Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China;

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