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Materials Advances Enable Wireless Development

机译:材料进步推动无线发展

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Chemistry, metallurgy and other branches of materials science have played an increasingly important role in the development of wireless products. Traditional methods often cannot meet the simultaneous demands for lower cost and higher performance, which presents an opportunity for a showcase of new developments. In electronics, semiconductors are usually the first components that come to mind. In the past half-dozen years, this industry segment has seen dramatic changes in the cost and performance of several materials and their processing technologies — silicon CMOS and BiCMOS, GaAs and AlGaAs, and more recently indium phosphide (InP), silicon-germanium (SiGe) and silicon carbide (SiC). As remarkable as the development of new semiconductor materials has been, it does not overshadow improvements to the "old" silicon technology. As pointed in out in the article by RF Micro Devices engineers in this issue, wireless designers may have five or more semiconductor types to choose from for the same application. The ability to weigh the tradeoffs is as important as basic circuit design skills.
机译:化学,冶金和材料科学的其他分支在无线产品的开发中起着越来越重要的作用。传统方法通常无法满足对低成本和高性能的同时需求,这为展示新技术提供了机会。在电子产品中,半导体通常是最先想到的组件。在过去的五年中,该行业细分市场已经在几种材料及其加工技术的成本和性能方面发生了巨大变化,包括硅CMOS和BiCMOS,GaAs和AlGaAs,以及最近的磷化铟(InP),硅锗( SiGe)和碳化硅(SiC)。就像新的半导体材料的发展一样引人注目,它并没有掩盖对“旧”硅技术的改进。正如RF Micro Devices工程师在本期文章中所指出的那样,对于同一应用,无线设计师可能有五种或更多半导体类型可供选择。权衡取舍的能力与基本电路设计技能一样重要。

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