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首页> 外文期刊>Antennas and Propagation, IEEE Transactions on >A Wideband CPW-Fed Planar Dielectric Tapered Antenna With Parasitic Elements for 60-GHz Integrated Application
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A Wideband CPW-Fed Planar Dielectric Tapered Antenna With Parasitic Elements for 60-GHz Integrated Application

机译:适用于60 GHz集成应用的带寄生元件的宽带CPW馈电平面介电锥形天线

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摘要

This paper presents a high-efficiency wideband planar dielectric tapered antenna designed for 60-GHz integrated applications fabricated through a novel process compatible with silicon technology. The antenna is composed of five parts: a CPW line, a balun, a tapered slot line, a dielectric tapered antenna, and parasitic elements. Single antenna has a simulated impedance bandwidth from 52.4 to 66.4 GHz, and a peak gain between 8.5 and 10.25 dBi over the bandwidth. Furthermore, a two-element array of this antenna is designed using a CPW power divider with a simulated 12-dBi gain and 9-GHz bandwidth. Single-element antenna and two-element array prototypes are fabricated on high-resistive bonded silicon wafers through a novel 11-step fabrication process designed for double-sided etching. The measured results of single antenna show over 15-GHz bandwidth and 9.6-dBi gain. For the two-element array measured, the bandwidth and gain are 10 GHz and 10.8 dBi, respectively. The antenna performance is suitable for integrated mm-wave applications requiring wide bandwidth, particularly mm-wave imaging.
机译:本文提出了一种通过与硅技术兼容的新颖工艺制造的,专为60 GHz集成应用而设计的高效宽带平面介电锥形天线。天线由五部分组成:CPW线,平衡-不平衡转换器,锥形缝隙线,电介质锥形天线和寄生元件。单个天线具有从52.4至66.4 GHz的模拟阻抗带宽,并且在该带宽上的峰值增益介于8.5和10.25 dBi之间。此外,使用CPW功率分配器设计了该天线的两元素阵列,该功率分配器具有模拟的12-dBi增益和9-GHz带宽。通过为双面蚀刻设计的新颖的11步制造工艺,可以在高电阻键合硅晶片上制造单元件天线和两元件阵列原型。单个天线的测量结果显示出超过15 GHz的带宽和9.6 dBi的增益。对于测量的两元素阵列,带宽和增益分别为10 GHz和10.8 dBi。天线性能适合需要宽带宽的集成毫米波应用,尤其是毫米波成像。

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