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Determination of impurities in vanadium carbide by high-pressure acid decomposition/ICP-AES

机译:高压酸分解/ ICP-AES法测定碳化钒中的杂质

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In order to determine impurities (eleven elements) in vanadium carbide (VC) by in- ductively coupled plasma atomic emission spectrometry (ICP-AES), a sample dissolution procedure using acids was examined. After a 0.25g amount of vanadium carbide powder sample was taken in a Teflon pressure vessel, 2ml of nitric acid (1+1) and 2ml of hy- drofluoric acid (1+1) were added. The vessel was then sealed and kept at 160℃ in a drying oven.
机译:为了通过电感耦合等离子体原子发射光谱法(ICP-AES)测定碳化钒(VC)中的杂质(11种元素),研究了使用酸的样品溶解程序。在特氟龙压力容器中取出0.25g的碳化钒粉末样品后,添加2ml硝酸(1 + 1)和2ml氢氟酸(1 + 1)。然后将容器密封并在干燥箱中保持在160℃。

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