Progress on Black Phosphorus Photonics

摘要

Recent years have witnessed the rapidly growing interests in the rediscoveredrnblack phosphorus (BP), an elemental group-V layered material withrnvery high carrier mobility among all semiconducting layered materials. As arnlayered semiconductor, the bandgap of intrinsic BP varies from ≈0.3 to 2 eVrndepending on the thickness. This bandgap value can be tuned to below 50rnmeV by a moderate external electric field. Adsorption doping and externalrnpressure can also effectively modify its bandgap. The largely tunable bandgaprnof BP makes it a promising material for infrared optics. Moreover, its uniquernpuckered structure leads to the anisotropic in-plane properties, making itrnideal for the exploration of exotic physical phenomena and the realizationrnof novel devices. Here, the fundamental optical properties are reviewedrnand latest developments on BP photonic and optoelectronic devices arerndiscussed.