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首页> 外文期刊>Advanced Optical Materials >Highly Responsive and Thermally Reliable Near-Infrared Organic Photodiodes Utilizing Naphthalocyanine Molecules Tuned with Axial Ligands
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Highly Responsive and Thermally Reliable Near-Infrared Organic Photodiodes Utilizing Naphthalocyanine Molecules Tuned with Axial Ligands

机译:利用轴配体调节萘酞菁分子的高响应性和可热可靠的近红外有机光电二极管

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摘要

Achieving high-performance near-infrared (NIR) photodiodes is in great demand for potential applications like biometrics, security, artificial vision, biomedical imaging, etc. Herein, silicon naphthalocyanine (SiNc) small molecule-based NIR photodiodes with narrowband absorption are presented. The optimized photodiode by varying the axial ligand in the SiNc molecules exhibits a high external quantum efficiency of 76.6% at 795 nm with narrow full width at half maximum of 80 nm, a very low dark current of 1.07 nA cm(-2) at a reverse bias of -3 V, and the resultant detectivity of 5.66 x 10(12) Jones. Further increase of the detectivity up to 10(13) Jones is obtained by modulating the applied bias to -1 V, which is among the highest values of organic NIR detectors reported to date. The SiNc-based photodiodes are further characterized by temporal response, linear dynamic range, etc., and shown to be stable in high humidity for over a month and in a remarkably wide temperature range (-55 to 125 degrees C). It is highly likely that the developed SiNc-based photodiodes can be applicable to a wide variety of NIR sensor platforms.
机译:实现高性能近红外(NIR)光电二极管对潜在的应用,如生物识别,安全性,人造视觉,生物医学成像等。在本文中,呈现了具有窄带吸收的硅萘酞菁(SINC)的基于窄带吸收的小分子的光电二极管。通过改变SINC分子中的轴向配体的优化光电二极管在795nm处具有76.6%的高外部量子效率,窄全宽80nm,在a的非常低的暗电流下为1.07纳米(-2)反向偏置-3 v,并得到5.66 x 10(12)琼斯的所得探测。通过调制施加的偏压至-1V,可以获得高达10(13)次琼斯的检测率的进一步增加,这是迄今为止报告的有机NIR探测器的最高值之​​一。基于SIST的光电二极管进一步是以时间响应,线性动态范围等特征,并且在高湿度下显示稳定超过一个月,并且在宽的温度范围内(-55至125℃)。很可能是开发的SINC系光电二极管可以适用于各种NIR传感器平台。

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  • 来源
    《Advanced Optical Materials》 |2021年第4期|2001682.1-2001682.8|共8页
  • 作者单位

    Samsung Elect Co Ltd Samsung Adv Inst Technol SAIT Mat Res Ctr 130 Samsung Ro Suwon 16678 Gyeonggi Do South Korea;

    Samsung Elect Co Ltd Samsung Adv Inst Technol SAIT Mat Res Ctr 130 Samsung Ro Suwon 16678 Gyeonggi Do South Korea;

    Univ Calif San Diego Dept Elect & Comp Engn 9500 Gilman Dr La Jolla CA 92093 USA;

    Samsung Elect Co Ltd Samsung Adv Inst Technol SAIT Mat Res Ctr 130 Samsung Ro Suwon 16678 Gyeonggi Do South Korea;

    Samsung Elect Co Ltd Samsung Adv Inst Technol SAIT Mat Res Ctr 130 Samsung Ro Suwon 16678 Gyeonggi Do South Korea;

    Samsung Elect Co Ltd Samsung Adv Inst Technol SAIT Mat Res Ctr 130 Samsung Ro Suwon 16678 Gyeonggi Do South Korea;

    Samsung Elect Co Ltd Samsung Adv Inst Technol SAIT Mat Res Ctr 130 Samsung Ro Suwon 16678 Gyeonggi Do South Korea;

    Samsung Elect Co Ltd Samsung Adv Inst Technol SAIT Mat Res Ctr 130 Samsung Ro Suwon 16678 Gyeonggi Do South Korea;

    Univ Calif San Diego Dept Elect & Comp Engn 9500 Gilman Dr La Jolla CA 92093 USA;

    Samsung Elect Co Ltd Samsung Adv Inst Technol SAIT Mat Res Ctr 130 Samsung Ro Suwon 16678 Gyeonggi Do South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    high detectivity; low dark current; naphthalocyanine; near#8208; IR sensors; organic photodetectors;

    机译:高探测;低暗电流;萘酞菁;近红外传感器;有机光电探测器;

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