Air-Stable n-Channel Organic Semiconductors Based on Perylene Diimide Derivatives without Strong Electron Withdrawing Groups

摘要

We have demonstrated good n-channel transistor performance and good air stability for TC-PTCDI and BPE-PTCDI TFTs. We obtained electron mobilities on the order of 0.1 cm~2V~(-1)s~(-1) by using OTS-treated surfaces and elevated substrate temperatures. The devices showed good air stability, even after storage in air for more than eighty days. Therefore, TC-PTCDI and BPE-PTCDI are potentially useful air-stable n-type semiconductors for thin-film transistors in CMOS circuits and photovoltaic devices.