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首页> 外文期刊>Advanced Materials >Epitaxial Ferroelectric Hf_(0.5)Zr_(0.5)O_2 with Metallic Pyrochlore Oxide Electrodes
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Epitaxial Ferroelectric Hf_(0.5)Zr_(0.5)O_2 with Metallic Pyrochlore Oxide Electrodes

机译:外延铁电HF_(0.5)ZR_(0.5)Zr_(0.5)O_2,具有金属纤维氧化物电极

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摘要

The synthesis of fully epitaxial ferroelectric Hf0.5Zr0.5O2 (HZO) thin films through the use of a conducting pyrochlore oxide electrode that acts as a structural and chemical template is reported. Such pyrochlores, exemplified by Pb2Ir2O7(PIO) and Bi2Ru2O7(BRO), exhibit metallic conductivity with room-temperature resistivity of 1 m omega cm and are closely lattice matched to yttria-stabilized zirconia substrates as well as the HZO layers grown on top of them. Evidence for epitaxy and domain formation is established with X-ray diffraction and scanning transmission electron microscopy, which show that the c-axis of the HZO film is normal to the substrate surface. The emergence of the non-polar-monoclinic phase from the polar-orthorhombic phase is observed when the HZO film thickness is =approximate to 30 nm. Thermodynamic analyses reveal the role of epitaxial strain and surface energy in stabilizing the polar phase as well as its coexistence with the non-polar-monoclinic phase as a function of film thickness.
机译:通过使用用作结构和化学模板的传导曲芯氧化物电极来合成完全外延铁电HF0.50.5O2(HZO)薄膜的合成。这种用PB2IR2O7(PIO)和BI2RU2O7(BRO)举例说明的这种发酵物,具有金属电导率,其具有<1mΩcm的室温电阻率,并且与ytTRIA稳定的氧化锆基底相匹配,并且在顶部生长的HZO层是紧密的晶格。他们。利用X射线衍射和扫描透射电子显微镜建立外延和结构域形成的证据,表明HZO膜的C轴正常到基板表面。当HZO膜厚度> =近似为30nm时,观察到来自极性正晶相的非极性单斜相的出现。热力学分析揭示了外延应变和表面能在稳定极阶段的角色以及与非极性单斜相的共存作为膜厚度的函数。

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  • 来源
    《Advanced Materials》 |2021年第10期|2006089.1-2006089.10|共10页
  • 作者单位

    Univ Calif Berkeley Dept Mat Sci & Engn Berkeley CA 94720 USA;

    Natl Ctr Electron Microscopy Mol Foundry Lawrence Berkeley Natl Lab Berkeley CA 94720 USA|Univ Calif Berkeley Dept Elect Engn & Comp Sci Berkeley CA 94720 USA;

    Argonne Natl Lab Adv Photon Source Lemont IL 60439 USA;

    Cornell Univ Platform Accelerated Realizat Anal & Discovery In Ithaca NY 14853 USA|Cornell Univ Dept Mat Sci & Engn Ithaca NY 14853 USA;

    Univ Calif Berkeley Dept Phys Berkeley CA 94720 USA;

    Univ Calif Berkeley Dept Phys Berkeley CA 94720 USA;

    Penn State Univ Dept Mat Sci & Engn University Pk PA 16802 USA;

    Univ Calif Berkeley Dept Mat Sci & Engn Berkeley CA 94720 USA;

    Univ Calif Berkeley Dept Mat Sci & Engn Berkeley CA 94720 USA;

    Univ Calif Berkeley Dept Mat Sci & Engn Berkeley CA 94720 USA;

    Univ Calif Berkeley Dept Mat Sci & Engn Berkeley CA 94720 USA;

    EMD Performance Mat San Jose CA 95134 USA;

    Asylum Res Goleta CA 93117 USA;

    Univ Nebraska Dept Phys Lincoln NE 68588 USA;

    Cornell Univ Platform Accelerated Realizat Anal & Discovery In Ithaca NY 14853 USA|Cornell Univ Dept Mat Sci & Engn Ithaca NY 14853 USA|Kavli Inst Cornell Nanoscale Sci Ithaca NY 14853 USA;

    Penn State Univ Dept Mat Sci & Engn University Pk PA 16802 USA;

    Univ Calif Berkeley Dept Elect Engn & Comp Sci Berkeley CA 94720 USA;

    Univ Calif Berkeley Dept Mat Sci & Engn Berkeley CA 94720 USA|Lawrence Berkeley Natl Lab Mat Sci Div Berkeley CA 94720 USA;

    Univ Calif Berkeley Dept Mat Sci & Engn Berkeley CA 94720 USA|Univ Calif Berkeley Dept Elect Engn & Comp Sci Berkeley CA 94720 USA|Univ Calif Berkeley Dept Phys Berkeley CA 94720 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    epitaxial growth; ferroelectrics; hafnia;

    机译:外延生长;铁电;Hafnia;
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