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首页> 外文期刊>Advanced Materials >Electrically Insulating Flexible Films with Quasi-1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub-THz Frequency Bands
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Electrically Insulating Flexible Films with Quasi-1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub-THz Frequency Bands

机译:用Quasi-1D范德瓦尔斯填充物在GHz和子THz频带中的高效电磁屏蔽,电绝缘柔性薄膜

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摘要

Polymer composite films containing fillers comprising quasi-1D van der Waals materials, specifically transition metal trichalcogenides with 1D structural motifs that enable their exfoliation into bundles of atomic threads, are reported. These nanostructures are characterized by extremely large aspect ratios of up to approximate to 10(6). The polymer composites with low loadings of quasi-1D TaSe3 fillers (3 vol%) reveal excellent electromagnetic interference shielding in the X-band GHz and extremely high frequency sub-THz frequency ranges, while remaining DC electrically insulating. The unique electromagnetic shielding characteristics of these films are attributed to effective coupling of the electromagnetic waves to the high-aspect-ratio electrically conductive TaSe3 atomic-thread bundles even when the filler concentration is below the electrical percolation threshold. These novel films are promising for high-frequency communication technologies, which require electromagnetic shielding films that are flexible, lightweight, corrosion resistant, inexpensive, and electrically insulating.
机译:含有含有Quasi-1d Van der WALS材料的填料的聚合物复合薄膜,特别是过渡金属三氯乙烷物,其具有1D结构基序,使其剥离成原子螺纹束。这些纳米结构的特征在于极大的宽高比,最高达到10(6)。具有低负载量的准1D螺栓填料的聚合物复合材料(<3 VOL%)揭示了X波段GHz和极高的频率子THZ频率范围内的优异的电磁干扰屏蔽,同时保持直流电绝缘。即使当填充浓度低于电渗透阈值时,这些薄膜的独特电磁屏蔽特性归因于这些薄膜的有效耦合到高纵横比导电脱离的螺纹束。这些新颖的薄膜对高频通信技术有前途,这需要电磁屏蔽薄膜,这些屏蔽薄膜是柔性,轻质,耐腐蚀,廉价和电绝缘的电磁屏蔽膜。

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  • 来源
    《Advanced Materials》 |2021年第11期|2007286.1-2007286.9|共9页
  • 作者单位

    Univ Calif Riverside Dept Elect & Comp Engn Nanodevice Lab NDL Riverside CA 92521 USA|Univ Calif Riverside Dept Elect & Comp Engn Phonon Optimized Engn Mat POEM Ctr Riverside CA 92521 USA;

    Univ Calif Riverside Dept Elect & Comp Engn Nanodevice Lab NDL Riverside CA 92521 USA|Univ Calif Riverside Dept Elect & Comp Engn Phonon Optimized Engn Mat POEM Ctr Riverside CA 92521 USA;

    Univ Georgia Dept Chem Athens GA 30602 USA;

    Univ Calif Riverside Dept Elect & Comp Engn Nanodevice Lab NDL Riverside CA 92521 USA|Univ Calif Riverside Dept Elect & Comp Engn Phonon Optimized Engn Mat POEM Ctr Riverside CA 92521 USA;

    Warsaw Univ Technol Inst Radioelect & Multimedia Technol PL-00665 Warsaw Poland;

    Univ Calif Riverside Dept Elect & Comp Engn Nanodevice Lab NDL Riverside CA 92521 USA|Univ Calif Riverside Dept Elect & Comp Engn Phonon Optimized Engn Mat POEM Ctr Riverside CA 92521 USA|Univ Calif Riverside Mat Sci & Engn Program Riverside CA 92521 USA;

    Warsaw Univ Technol Inst Radioelect & Multimedia Technol PL-00665 Warsaw Poland|Polish Acad Sci Inst High Pressure Phys CENTERA Labs PL-01142 Warsaw Poland;

    Polish Acad Sci Inst High Pressure Phys CENTERA Labs PL-01142 Warsaw Poland|Warsaw Univ Technol CEZAMAT PL-02822 Warsaw Poland;

    Polish Acad Sci Inst High Pressure Phys CENTERA Labs PL-01142 Warsaw Poland;

    Univ Georgia Dept Chem Athens GA 30602 USA;

    Univ Calif Riverside Dept Elect & Comp Engn Nanodevice Lab NDL Riverside CA 92521 USA|Univ Calif Riverside Dept Elect & Comp Engn Phonon Optimized Engn Mat POEM Ctr Riverside CA 92521 USA|Univ Calif Riverside Mat Sci & Engn Program Riverside CA 92521 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    electromagnetic interference shielding; GHz and sub#8208; THz; polymer composites; quasi#8208; 1D materials; van der Waals materials;

    机译:电磁干扰屏蔽;GHz和亚ZZ;聚合物复合材料;准1D材料;范德沃尔斯材料;
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