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Curving Nanostructures Using Extrinsic Stress

机译:使用外部应力弯曲纳米结构

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摘要

We demonstrate the concept of inducing stresses in thin films post-deposition (extrinsic stress) to curve nanostructures on demand. The remarkably high extrinsic stress, induced by triggering grain coalescence in Sn thin films, was used to self-assemble 3D nanostructures with radii of curvature as small as 20 nm. The fabrication methodology required only simple processing steps and the self-assembly process was highly parallel. Curved nanostructures with any desired pattern and both homogeneous (rings, tubes) and variable radii of curvature (spirals, talons) could be constructed.
机译:我们演示了在薄膜沉积后诱导应力(外部应力)以按需弯曲纳米结构的概念。通过触发Sn薄膜中的晶粒聚结而引起的极高的外部应力被用于自组装3D纳米结构,其曲率半径小至20 nm。制造方法仅需要简单的处理步骤,并且自组装过程高度并行。可以构建具有任何所需图案的弯曲纳米结构,并且具有均质的(环形,管状)和可变的曲率半径(螺旋形,爪形)。

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  • 来源
    《Advanced Materials》 |2010年第21期|P.2320-23242280|共6页
  • 作者单位

    Department of Chemical and Biomolecular Engineering Johns Hopkins University Baltimore, MD 21218 (USA);

    rnDepartment of Chemical and Biomolecular Engineering Johns Hopkins University Baltimore, MD 21218 (USA);

    rnDepartment of Chemical and Biomolecular Engineering Johns Hopkins University Baltimore, MD 21218 (USA) Department of Chemistry Johns Hopkins University Baltimore, MD 21218 (USA);

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