Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors

摘要

Matrices of thin film-transistors (TFTs) in next generation displays not only require semiconductors with high performance, but also require them to feature high optical transparency, and low-temperature and solution processability.To date, hydro-genated amorphous silicon (a-Si:H)-based TFTs have been used widely as the pixel switches in displays.However, amorphous silicon has a relatively low mobility (～1 cm~2 V~(-1) s~(-1)) and its deposition requires a high-cost vacuum process. More importantly, the poor transparency of silicon makes it unsuitable for transparent applications, and transparency is one of the key issues for future display technology. Consequently, in a search for alternatives for amorphous silicon, considerable interest has focused on metal oxide semiconductors, such as In, Ga, or Zn oxides, as these exhibit high optical transparencies, and have excellent electrical properties with high electron mobility, chemical stability, and solution processability.