Single-Step Formation of Craphene on Dielectric Surfaces

摘要

The past few years have witnessed significant strides towards the scalable growth of graphene, stimulated by its potential in a broad range of applications. Fabricating graphene-based functional devices frequently requires the deposition of graphene on dielectric surfaces, such as silicon dioxide (SiO_2/ Si), which generally calls for post-growth catalyst etching and graphene transfer in currently available approaches. In this research, we succeeded in the direct formation of graphene on various dielectric surfaces via a single-step rapid thermal processing (RTP) of substrates coated with amorphous carbon (C) and nickel (Ni) thin films.