...
机译:离子束溅射沉积在镍箔上合成大型单晶六方氮化硼畴
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;
Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China;
Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China;
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;
机译:离子束溅射沉积法在铜箔上控制多层六方氮化硼的生长
机译:分子束外延法在镍箔上合成原子薄六方氮化硼薄膜
机译:Cu-Ni梯度外壳上大尺寸单晶六方氮化物的高通量合成
机译:在铜箔上化学气相沉积法合成大面积单晶石墨烯畴的优化
机译:六方氮化硼/石墨烯异质结构,六方氮化硼层和立方氮化硼纳米点的分子束外延生长
机译:通过化学气相沉积可控合成原子层状六方氮化硼
机译:在镍上合成原子级薄的六方氮化硼薄膜 通过分子束外延的箔