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Lanthanide Contraction as a Design Factor for High-Performance Half-Heusler Thermoelectric Materials

机译:镧系元素收缩作为高性能半霍斯勒热电材料的设计因素

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摘要

Forming solid solutions, as an effective strategy to improve thermoelectric performance, has a dilemma that alloy scattering will reduce both the thermal conductivity and carrier mobility. Here, an intuitive way is proposed to decouple the opposite effects, that is, using lanthanide contraction as a design factor to select alloying atoms with large mass fluctuation but small radius difference from the host atoms. Typical half-Heusler alloys, n-type (Zr,Hf)NiSn and p-type (Nb,Ta)FeSb solid solutions, are taken as paradigms to attest the validity of this design strategy, which exhibit greatly suppressed lattice thermal conductivity and maintained carrier mobility. Furthermore, by considering lanthanide contraction, n-type (Zr,Hf)CoSb-based alloys with high zT of approximate to 1.0 are developed. These results highlight the significance of lanthanide contraction as a design factor in enhancing the thermoelectric performance and reveal the practical potential of (Zr,Hf)CoSb-based half-Heusler compounds due to the matched n-type and p-type thermoelectric performance.
机译:作为提高热电性能的有效策略,形成固溶体存在一个难题,即合金散射会同时降低导热率和载流子迁移率。在这里,提出了一种直观的方法来消除相反的影响,即使用镧系元素收缩作为设计因子来选择质量波动大但与主体原子的半径差较小的合金原子。 n型(Zr,Hf)NiSn和p型(Nb,Ta)FeSb固溶体的典型半Heusler合金被用作范例来证明该设计策略的有效性,该策略显示出大大抑制的晶格热导率并保持运营商流动性。此外,通过考虑镧系元素的收缩,开发了具有约1.0的高zT的n型(Zr,Hf)CoSb基合金。这些结果突出了镧系元素收缩作为提高热电性能的设计因素的重要性,并揭示了由于匹配的n型和p型热电性能而基于(Zr,Hf)CoSb的半霍斯勒化合物的实际潜力。

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  • 来源
    《Advanced Materials》 |2018年第32期|1800881.1-1800881.7|共7页
  • 作者单位

    Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;

    Max Planck Inst Chem Phys Solids, Nothnitzer Str 40, D-01187 Dresden, Germany;

    Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;

    Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;

    Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;

    Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;

    Max Planck Inst Chem Phys Solids, Nothnitzer Str 40, D-01187 Dresden, Germany;

    Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    alloy scattering; half-Heusler; lanthanide contraction; thermoelectrics;

    机译:合金散射;半霍斯勒;镧系元素收缩;热电;

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