机译:镧系元素收缩作为高性能半霍斯勒热电材料的设计因素
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;
Max Planck Inst Chem Phys Solids, Nothnitzer Str 40, D-01187 Dresden, Germany;
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;
Max Planck Inst Chem Phys Solids, Nothnitzer Str 40, D-01187 Dresden, Germany;
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;
alloy scattering; half-Heusler; lanthanide contraction; thermoelectrics;
机译:高性能无序半霍斯勒热电材料的18电子法则设计
机译:基于第一原理的高性能半霍斯勒热电材料的能带结构和输运性质
机译:缺陷工程驱动Zrnisn基半风琴热电材料的高功率因数
机译:使用光学浮区熔化制造的半同HEUSLER MNISN(M = HF,ZR)单相热电合金的高性能
机译:来自半赫斯勒/全赫斯勒系统Ti–Ni–Sn的双相热电材料
机译:基于第一原理的高性能半霍斯勒热电材料的能带结构和输运性质
机译:半赫斯勒衍生物Ti9Ni7sn8的增强功率因数和降低的热导率:大块纳米复合热电材料 ud