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Formation of Thick Porous Anodic Alumina Films and Nanowire Arrays on Silicon Wafers and Glass

机译:在硅晶片和玻璃上形成厚多孔阳极氧化铝膜和纳米线阵列

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摘要

A method for the fabrication of thick films of porous anodic alumina on rigid substrates is described. The anodic alumina film was generated by the anodization of an aluminum film evaporated on the substrate. the morphology of the barrier layer between the porous film and the substrate was different from that of anodic films grown on aluminum substrates. the removal of the barrier layer and the electrochemical growth of nanowires within the ordered pores were accomplished without the need to remove the anodic film from the substrate. We fabricated porous anodic alumina samples over large areas (up to 70 cm~2), and deposited in them nanowire arrays of various materials. Long nanowires were obtained with lengths of at least 9 μm and aspect ratios as high as 300. Due to their mechanical robustness and the built-in contact between the conducting substrate and the nanowires, the structures were useful for electrical transport measurements on the arrays. The method was also demonstrated on patterned and non-planar substrates, further expanding the range of applications of these porous alumina and nano-wire assemblies.
机译:描述了一种在刚性基底上制造多孔阳极氧化铝厚膜的方法。阳极氧化铝膜是通过对在基板上蒸发的铝膜进行阳极氧化而生成的。多孔膜和基底之间的阻挡层的形态不同于在铝基底上生长的阳极膜的形态。去除阻挡层和在有序孔内纳米线的电化学生长无需从基底上去除阳极膜即可完成。我们在大面积(最大70 cm〜2)上制作了多孔阳极氧化铝样品,并在其中沉积了各种材料的纳米线阵列。获得了长度至少为9μm,长宽比高达300的长纳米线。由于其机械强度和导电基板与纳米线之间的内置接触,该结构可用于阵列上的电迁移测量。该方法还在图案化和非平面基材上得到了证明,进一步扩展了这些多孔氧化铝和纳米线组件的应用范围。

著录项

  • 来源
    《Advanced Functional Materials》 |2003年第8期|p. 631-638|共8页
  • 作者单位

    Department of Chemistry Massachusetts Institute of Technology Cambridge MA 02139-4307 USA;

    Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge, MA 02139-4307 USA;

    Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge, MA 02139-4307 USA;

    Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge, MA 02139-4307 USA;

    Department of Physics, Harvard University, Cambridge, MA 02138, USA;

    Department of Physics and Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge, MA 02139-4307 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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