机译:在硅晶片和玻璃上形成厚多孔阳极氧化铝膜和纳米线阵列
Department of Chemistry Massachusetts Institute of Technology Cambridge MA 02139-4307 USA;
Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge, MA 02139-4307 USA;
Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge, MA 02139-4307 USA;
Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge, MA 02139-4307 USA;
Department of Physics, Harvard University, Cambridge, MA 02138, USA;
Department of Physics and Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge, MA 02139-4307 USA;
机译:具有高垂直孔密度的硅上几纳米厚的阳极多孔氧化铝膜
机译:玻璃和硅片与中间氮化硅膜的阳极键合及其在SPM尖端阵列批量生产中的应用
机译:阳极多孔氧化铝模板中硒纳米线阵列的形成和相变
机译:厚度阳极氧化铝膜上的纳米线沉积在硅膜
机译:多孔硅的电化学制备和物理化学表征以及多孔二氧化硅的阳极膜。
机译:在100硅晶片上的多孔氧化铝模板中生长的高度组织化和密集的垂直硅纳米线阵列
机译:在<100>硅晶片上的多孔氧化铝模板中生长的高度组织化和密集的垂直硅纳米线阵列
机译:室温下电压感应绝缘子 - 金属在阳极多孔氧化铝薄膜中的转变