...
机译:一维GaN纳米线基板上的纳米同质结(GaN)和纳米异质结(InN)纳米棒
1Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan;
Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan;
Department of Chemistry, National Taiwan Normal University, Taipei 106, Taiwan;
1Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan;
Department of Chemistry, National Taiwan Normal University, Taipei 106, Taiwan;
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan;
Department of Chemistry, National Taiwan Normal University, Taipei 106, Taiwan;
Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan;
Department of Chemistry, National Taiwan Normal University, Taipei 106, Taiwan;
机译:以InN纳米棒为模板在c-Al_2O_3衬底上生长的单晶GaN纳米管阵列
机译:SiC / Si(111)混合基板上GaN,InN和A3 B5纳米线的MBE生长和光学特性
机译:MBE GaN,Inn和A3B5纳米线对SiC / Si(111)混合衬底的生长和光学性质
机译:ZnO纳米线/ p-GaN纳米异质结阵列的制备及其在紫外线和太阳光下的光电特性
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:GaN核和InGaN / GaN多重外延生长导热铍上的量子阱核/壳纳米线氧化物基板
机译:在si(111)衬底上的InN-GaN核 - 壳纳米线的微拉曼研究
机译:基于熔盐的生长大块GaN和inN用于衬底