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Processing and Low Voltage Switching of Organic Ferroelectric Phase-Separated Bistable Diodes

机译:有机铁电相分离双稳态二极管的处理和低压开关

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摘要

The processing of solution-based binary blends of the ferroelectric random copolymer poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) and the semiconducting polymer poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO) applied by spin-coating and wire-bar coating is investigated. By systematic variation of blend composition, solvent, and deposition temperature it is shown that much smoother blend films can be obtained than reported thus far. At a low PFO:P(VDF-TrFE) ratio the blend film consists of disk-shaped PFO domains embedded in a P(VDF-TrFE) matrix, while an inverted structure is obtained in case the P(VDF-TrFE) is the minority component. The microstructure of the phase separated blend films is self-affine. From this observation and from the domain size distribution it is concluded that the phase separation occurs via spinodal decomposition, irrespectively of blend ratio. This is explained by the strong incompatibility of the two polymers expressed by the binary phase diagram, as constructed from thermal analysis data. Time resolved numerical simulation of the microstructure evolution during de-mixing qualitatively shows how an elevated deposition temperature has a smoothening effect as a result of the reduction of the repulsion between the blend components. The small roughness allowed the realization of bistable rectifying diodes that switch at low voltages with a yield of 100%. This indicates that memory characteristics can be tailored from the outset while processing parameters can be adjusted according to the phase behavior of the active components.
机译:铁电无规共聚物聚偏二氟乙烯-三氟乙烯P(VDF-TrFE)与半导体聚合物聚(9,9-二辛基芴基-2,7-二基)(PFO)的溶液基二元共混物的加工-涂层和线棒涂层的研究。通过系统地改变共混物的组成,溶剂和沉积温度,可以显示出比迄今为止报道的要光滑得多的共混膜。在低PFO:P(VDF-TrFE)比率下,共混膜由嵌入P(VDF-TrFE)矩阵中的盘状PFO域组成,而在P(VDF-TrFE)为少数民族成分。相分离共混膜的微观结构是自仿射的。根据该观察结果和畴尺寸分布,可以得出结论,通过旋节线分解发生了相分离,而与混合比无关。由热分析数据构建的二元相图表示的两种聚合物的强烈不相容性可以解释这一点。时间分解的微观结构演化过程的时间分辨数值模拟定性地显示了升高的沉积温度如何通过减少共混组分之间的排斥力而具有平滑效果。小的粗糙度允许实现双稳态整流二极管,该二极管在低电压下以100%的产率开关。这表明可以从一开始就调整存储器特性,而可以根据有源组件的相位行为来调整处理参数。

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  • 来源
    《Advanced Functional Materials 》 |2012年第13期| p.2750-2757| 共8页
  • 作者单位

    Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4, 9747 AG, Groningen The Netherlands;

    Department of Materials and Centre for Plastic Electronics Imperial College London Exhibition Road, London, SW7 2AZ, UK,FRIAS, School of Soft Matter Research University of Freiburg 79104 Freiburg, Germany;

    Hoist Centre, High Tech Campus 31 5605 KN Eindhoven, The Netherlands;

    Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4, 9747 AG, Groningen The Netherlands;

    Philips Research Laboratories High Tech Campus 4, 5656AE, Eindhoven The Netherlands;

    Philips Research Laboratories High Tech Campus 4, 5656AE, Eindhoven The Netherlands;

    CNR- ISMN, Institute for the Study of Nanostructured Materials Via Gobetti 101, 1-40129 Bologna, Italy;

    Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4, 9747 AG, Groningen The Netherlands,Hoist Centre, High Tech Campus 31 5605 KN Eindhoven, The Netherlands;

    Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4, 9747 AG, Groningen The Netherlands,Philips Research Laboratories High Tech Campus 4, 5656AE, Eindhoven The Netherlands;

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