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机译:碳纳米管场效应晶体管中的磁滞源及其通过甲基硅氧烷密封剂消除和优化的生长程序
Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801, USA;
Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801, USA;
Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801, USA;
Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801, USA;
Department of Electrical and Computer Engineering Purdue University West Lafayette, IN 47906, USA;
Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801, USA,Departments of Chemistry Mechanical Science and Engineering Electrical, and Computer Engineering Beckman Institute for Advanced Science and Technology University of Illinois at Urbana-Champaign Urbana, IL 61801, USA;
机译:单壁碳纳米管生长的优化及随机网络碳纳米管薄膜晶体管的磁滞研究
机译:碳纳米管场效应晶体管的源/漏掺杂水平的优化,以在保持理想导通状态电流的同时抑制截止状态漏电流
机译:具有引线锆型 - 钛酸盐门控的单壁碳纳米管网络场效应晶体管滞后行为的铁电偏振效应
机译:(邀请)使用聚合物密封剂和栅极电介质改变碳纳米管网络场效应晶体管的电气传输
机译:单壁碳纳米管的合成和基于纳米管的场效应晶体管的表征。
机译:弹道碳纳米管场效应晶体管中的磁滞建模
机译:碳纳米管场效应的紧凑虚源模型 sub-10-nm体系中的晶体管 - 第二部分外在元素,性能 评估和设计优化