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Versatile α,ω-Disubstituted Tetrathienoacene Semiconductors for High Performance Organic Thin-Film Transistors

机译:用于高性能有机薄膜晶体管的多功能α,ω-二取代四硫杂蒽并用半导体

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摘要

Facile one-pot [1 + 1+2] and (2 + 1 + 1] syntheses of thieno[3,2-b]-thieno[2',3':4,5]thieno[2,3-d]thiophene (tetrathienoacene; TTA) semiconductors are described which enable the efficient realization of a new TTA-based series for organic thin-film transistors (OTFTs). For the perfluorophenyl end-functionalized derivative DFP-TTA, the molecular structure is determined by single-crystal X-ray diffraction. This material exhibits n-channel transport with a mobility as high as 0.30 cm~2V~(-1)s~(-1) and a high on-off ratio of 1.8 × 10~7. Thus, DFP-TTA has one of the highest electron mobilities of any fused thiophene semiconductor yet discovered. For the phenyl-substituted analogue, DP-TTA, p-channel transport is observed with a mobility as high as 0.21 cm~2V~(-1)s~(-1). For the 2-benzothiazolyl (BS-) containing derivative, DBS-TTA, p-channel transport is still exhibited with a hole mobility close to 2 × 10~(-3)cm~2V~(-1)s~(-1). Within this family, carrier mobility magnitudes are strongly dependent on the semiconductor growth conditions and the gate dielectric surface treatment.
机译:方便的一锅[1 + 1 + 2]和(2 +1 + 1]合成thieno [3,2-b] -thieno [2',3':4,5] thieno [2,3-d]本文介绍了噻吩(四硫杂并苯; TTA)半导体,该半导体能够有效实现用于有机薄膜晶体管(OTFT)的新型基于TTA的系列。对于全氟苯基末端官能化的衍生物DFP-TTA,分子结构由单-晶体X射线衍射该材料具有n沟道传输,迁移率高达0.30 cm〜2V〜(-1)s〜(-1),开/关比高,为1.8×10〜7。 DFP-TTA具有迄今发现的所有熔融噻吩半导体中最高的电子迁移率之一,对于苯基取代的类似物DP-TTA,观察到的p沟道迁移率高达0.21 cm〜2V〜(-1)。 s〜(-1)。对于含有2-苯并噻唑基(BS-)的衍生物DBS-TTA,p沟道传输仍然表现为空穴迁移率接近2×10〜(-3)cm〜2V〜(- 1)s〜(-1)。在这个族内,载流子迁移幅度是很强的取决于半导体的生长条件和栅极介电表面处理。

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  • 来源
    《Advanced Functional Materials》 |2012年第1期|p.48-60|共13页
  • 作者单位

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Rd., Evanston, IL 60208-3113, USA;

    Department of Chemistry National Central University Jhong-Li 32054, Taiwan;

    Department of Chemistry National Central University Jhong-Li 32054, Taiwan;

    Department of Chemistry National Central University Jhong-Li 32054, Taiwan;

    Department of Chemistry National Central University Jhong-Li 32054, Taiwan;

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Rd., Evanston, IL 60208-3113, USA;

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Rd., Evanston, IL 60208-3113, USA,Department of Physical Chemistry University of Malaga 29071, Malaga, Spain;

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Rd., Evanston, IL 60208-3113, USA;

    Department of Chemistry National Central University Jhong-Li 32054, Taiwan;

    Department of Chemistry National Central University Jhong-Li 32054, Taiwan;

    Process Technology Division Display Technology Center Industrial Technology Research Institute Chung Hsing Rd., Chutung, Hsinchu, Taiwan 31040, R.O.C.;

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Rd., Evanston, IL 60208-3113, USA;

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Rd., Evanston, IL 60208-3113, USA;

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