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Highly Robust Indium-Free Transparent Conductive Electrodes Based on Composites of Silver Nanowires and Conductive Metal Oxides

机译:基于银纳米线和导电金属氧化物复合材料的高度耐用的无铟透明导电电极

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摘要

A hybrid approach for the realization of In-free transparent conductive layers based on a composite of a mesh of silver nanowires (NWs) and a conductive metal-oxide is demonstrated. As metal-oxide room-temperature-processed sol-gel SnO_x or Al:ZnO prepared by low-temperature (100 ℃) atomic layer deposition is used, respectively. In this concept, the metal-oxide is intended to fuse the wires together and also to "glue" them to the substrate. As a result, a low sheet resistance down to 5.2 Ω sq~(-1) is achieved with a concomitant average transmission of 87%. The adhesion of the NWs to the substrate is significantly improved and the resulting composites withstand adhesion tests without loss in conductivity. Owing to the low processing temperatures, this concept allows highly robust, highly conductive, and transparent coatings even on top of temperature sensitive objects, for example, polymer foils, organic devices. These Indium- and PEDOT:PSS-free hybrid layers are successfully implemented as transparent top-electrodes in efficient all-solution-processed semitransparent organic solar cells. It is obvious that this approach is not limited to organic solar cells but will generally be applicable in devices which require transparent electrodes.
机译:展示了一种基于银纳米线(NWs)和导电金属氧化物的复合材料来实现无In透明导电层的混合方法。作为通过低温(100℃)原子层沉积制备的金属氧化物室温处理的溶胶-凝胶SnO_x或Al:ZnO。在这个概念中,金属氧化物旨在将导线熔合在一起,并且还将它们“胶粘”到基板上。结果,实现了低至5.2Ωsq〜(-1)的低薄层电阻,同时平均透射率为87%。 NW与基材的粘合性得到了显着改善,所得复合材料可以经受粘合性测试而不会降低导电性。由于加工温度低,即使在温度敏感的物体(例如聚合物箔,有机设备)的顶部,该概念也可以实现高度坚固,高导电和透明的涂层。这些无铟和无PEDOT:PSS的混合层已成功实现为高效的全溶液处理半透明有机太阳能电池中的透明顶电极。显然,该方法不限于有机太阳能电池,而是通常可应用于需要透明电极的设备中。

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  • 来源
    《Advanced Functional Materials》 |2014年第12期|1671-1678|共8页
  • 作者单位

    Institute of Electronic Devices University of Wuppertal Rainer-Gruenter-Str. 21, 42119, Wuppertal, Germany;

    Institute of Electronic Devices University of Wuppertal Rainer-Gruenter-Str. 21, 42119, Wuppertal, Germany;

    Institute of Electronic Devices University of Wuppertal Rainer-Gruenter-Str. 21, 42119, Wuppertal, Germany;

    Institute of Electronic Devices University of Wuppertal Rainer-Gruenter-Str. 21, 42119, Wuppertal, Germany;

    Institute of Electronic Devices University of Wuppertal Rainer-Gruenter-Str. 21, 42119, Wuppertal, Germany;

    Institute of Electronic Devices University of Wuppertal Rainer-Gruenter-Str. 21, 42119, Wuppertal, Germany;

    Institute of Electronic Devices University of Wuppertal Rainer-Gruenter-Str. 21, 42119, Wuppertal, Germany;

    Institute of Electronic Devices University of Wuppertal Rainer-Gruenter-Str. 21, 42119, Wuppertal, Germany;

    Institute of Electronic Devices University of Wuppertal Rainer-Gruenter-Str. 21, 42119, Wuppertal, Germany;

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