Realization of Boolean Logic Functionality Using Redox-Based Memristiven Devices

摘要

Emerging resistively switching devices are thought to enable ultradense passive nanocrossbar arrays for use as random access memories (ReRAM) by the end of the decade, both for embedded and mass storage applications. Moreover, ReRAMs offer inherent logic-in-memory (LIM) capabilities due to the nonvolatility of the devices and therefore great potential to reduce the communication between memory and calculation unit by alleviating the so-called von Neumann bottleneck. A single bipolar resistive sw