Phenylhydrazinium Iodide for Surface Passivation and Defects Suppression in Perovskite Solar Cells

摘要

In recent years, hybrid perovskite solar cells (HPSCs) have received considerable research attention due to their impressive photovoltaic performance and low-temperature solution processing capability. However, there remain challenges related to defect passivation and enhancing the charge carrier dynamics of the perovskites, to further increase the power conversion efficiency of HPSCs. In this work, the use of a novel material, phenylhydrazinium iodide (PHAI), as an additive in MAPbI(3) perovskite for defect minimization and enhancement of the charge carrier dynamics of inverted HPSCs is reported. Incorporation of the PHAI in perovskite precursor solution facilitates controlled crystallization, higher carrier lifetime, as well as less recombination. In addition, PHAI additive treated HPSCs exhibit lower density of filled trap states (10(10) cm(-2)) in perovskite grain boundaries, higher charge carrier mobility (approximate to 11 x 10(-4) cm(2) V-1 s), and enhanced power conversion efficiency (approximate to 18%) that corresponds to a approximate to 20% improvement in comparison to the pristine devices.