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A Strategy for Synthesis of Carbon Nitride Induced Chemically Doped 2D MXene for High-Performance Supercapacitor Electrodes

机译:高性能超级电容器电极的碳氮化物诱导化学掺杂二维MXene合成策略

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摘要

A step-by-step strategy is reported for improving capacitance of supercapacitor electrodes by synthesizing nitrogen-doped 2D Ti2CTx induced by polymeric carbon nitride (p-C3N4), which simultaneously acts as a nitrogen source and intercalant. The NH2CN (cyanamide) can form p-C3N4 on the surface of Ti(2)CTx nanosheets by a condensation reaction at 500-700 degrees C. The p-C3N4 and Ti(2)CTx complexes are then heat-treated to obtain nitrogen-doped Ti2CTx nanosheets. The triazine-based p-C3N4 decomposes above 700 degrees C; thus, the nitrogen species can be surely doped into the internal carbon layer and/or defect site of Ti2CTx nanosheets at 900 degrees C. The extended interlayer distance and c-lattice parameters (c-LPs of 28.66 angstrom) of Ti2CTx prove that the p-C3N4 grown between layers delaminate the nanosheets of Ti2CTx during the doping process. Moreover, 15.48% nitrogen doping in Ti2CTx improves the electrochemical performance and energy storage ability. Due to the synergetic effect of delaminated structures and heteroatom compositions, N-doped Ti2CTx shows excellent characteristics as an electrochemical capacitor electrode, such as perfectly rectangular cyclic voltammetry results (CVs, R-2 = 0.9999), high capacitance (327 F g(-1) at 1 A g(-1), increased by approximate to 140% over pristine-Ti2CTx), and stable long cyclic performance (96.2% capacitance retention after 5000 cycles) at high current density (5 A g(-1)).
机译:据报道,通过合成由聚合物氮化碳(p-C3N4)诱导的氮掺杂2D Ti2CTx的逐步策略来改善超级电容器电极的电容,而聚合物氮化碳同时用作氮源和嵌入剂。 NH2CN(氰胺)可以在500-700摄氏度下通过缩合反应在Ti(2)CTx纳米片的表面上形成p-C3N4。然后对p-C3N4和Ti(2)CTx配合物进行热处理以获得氮掺杂的Ti2CTx纳米片。基于三嗪的p-C3N4在700摄氏度以上会分解;因此,可以在900摄氏度下将氮物种确实地掺杂到Ti2CTx纳米片的内部碳层和/或缺陷位点中。Ti2CTx的扩展层间距离和c-晶格参数(c-LP为28.66埃)证明了p在掺杂过程中,层之间生长的-C3N4使Ti2CTx纳米片分层。此外,Ti2CTx中的15.48%氮掺杂提高了电化学性能和能量存储能力。由于层状结构和杂原子组成的协同作用,N掺杂的Ti2CTx具有出色的电化学电容器电极特性,例如完美的矩形循环伏安法(CVs,R-2 = 0.9999),高电容(327 F g(- 1)在1 A g(-1)时,比原始Ti2CTx增加约140%),并在高电流密度(5 A g(-1))下具有稳定的长循环性能(5000次循环后96.2%的电容保持率) 。

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  • 来源
    《Advanced energy materials》 |2018年第15期|1703173.1-1703173.11|共11页
  • 作者单位

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 34114, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 34114, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 34114, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 34114, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 34114, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 34114, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 34114, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 34114, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 34114, South Korea;

    Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, POB 107, Daejeon 34114, South Korea;

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  • 正文语种 eng
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  • 关键词

    2D materials; high-performance; MXenes; nitrogen doping; supercapacitors;

    机译:二维材料;高性能;MXenes;氮掺杂;超级电容器;

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